芯片： RL78/F14 - R5F10PLJ
编译器：IAR Embedded Workbench for Renesas RL78
软件工程编译完成后，.map文件显示：readwrite data memory 使用了42K左右，但该芯片实际RAM只有20KB（FAF00H~FFEFFH），超了两倍多
但是看到const 定义的常量是放置在 F3000H~FAEFFH 地址段，对应芯片的Mirror区域，也被统计进了最终的readwrite data memory
请教一下：
1. 这个readwrite data memory 的统计数据是 RAM 和 Mirror 区总使用大小吗？
2. 如果readwrite data memory 只是代表RAM的实际使用大小，目前RAM实际使用超了2倍多，软件还能正常运行吗？
初入嵌入式，请大佬多多指教，感谢！
My understanding is that 'readwrite data memory' is RAM only. But I do not know has the IAR is calculating that before the program executes. So I am not sure if the program will work, some testing seems…
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My understanding is that 'readwrite data memory' is RAM only. But I do not know has the IAR is calculating that before the program executes. So I am not sure if the program will work, some testing seems necessary.
The mirror area is basically an area where a part of code flash is mirrored, so it is a copy of a part of code flash. It should not be confused with RAM, it is totally different.
The code flash contents on 03000H - 0AEFFH are mirrored in the mirror area.
I would also look into the 28K bytes required for data flash while only 8K are available.